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| Schottky Barrier Diodes (SBD) MA4X746 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features * IF(AV) = 200 mA, and VR > 50 V is achieved * Allowing automatic insertion with the emboss taping * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * High rectification efficiency caused by its low forward-risevoltage (VF) 2.8 - 0.3 0.65 0.15 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.5 R 1.9 0.2 2.9 - 0.05 0.95 4 1 + 0.2 0.95 0.5 2 + 0.1 3 0.4 - 0.05 0.2 1.1 - 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non repetitive peak forward 2 current* Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Single Double*1 Single Double*1 Single Double*1 Rating 50 50 1 0.75 300 225 200 150 150 -55 to +150 Unit V V A 0.4 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M3M mA Peak forward current Average forward current Internal Connection 4 3 1 2 mA C C Junction temperature Storage temperature Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 200 0.36 0.55 Unit A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz Bias Application Unit N-50BU Input Pulse Output Pulse 3. * : trr measuring instrument tr 10% tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.8 0.16 - 0.06 + 0.1 0.6 - 0 + 0.1 0.4 - 0.05 1.45 + 0.1 1 MA4X746 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 0.5 IF = 200 mA 105 Ta = 150C IR VR 102 Forward current IF (mA) Forward voltage VF (V) 10 100C 100 mA 0.3 Reverse current IR (A) Ta = 150C - 20C 0.4 104 103 100C 1 25C 0.2 30 mA 0.1 102 25C 10 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 30 f = 1 MHz Ta = 25C 105 IR T a Terminal capacitance Ct (pF) 25 104 20 Reverse current IR (A) 103 VR = 30 V 102 5V 15 10 5 10 0 0 10 20 30 40 50 60 1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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